Llinell gymorth gwasanaeth
+ 86 0755-83044319
Silicon carbide SiC is a compound semiconductor material composed of silicon Si and carbon C, usually in 4H-SiC crystal type. Its insulation breakdown field strength is 10 times that of Si, energy gap is 3 times that of Si, thermal conductivity is 3 times that of Si, and saturation drift speed is 2 times that of Si. It is a very superior power electronic device material than Si.
Os oes gennych gwestiynau cymorth, rhowch wybod i ni. Am gymorth dylunio, rhowch wybod i ni a llenwchFfurflen Cymorth TechnegolByddwn yn cysylltu â chi cyn gynted â phosibl.
Os gwelwch yn dda ewch i'nFforwm CymunedolorFfurflen Gyswllt.
